 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings Parameter Reverse voltage Forward current Total Power dissipation TS 80C BAR 63-04,-05,-06 TS 55C Operating temperature range Storage temperature range Thermal resistance Junction-ambient BAR63 BAR 63-04,-05,-06 1) Symbol BAR 63 50 100 250 250 -55 +150C -55...+150C Unit V mA mW C C VR IF Ptot Top Tstg Rth JA 450 540 K/W Junction-soldering point BAR64 BAR63-04,-05,-06 Rth JS 280 380 _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 23.02.95 BAR 63... Electrical characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC characteristics Breakdown voltage IR = 5 A Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Forward current IF = f (TA*TS) BAR63 V(BR) 50 0.95 0.3 0.21 1.2 1 75 1.4 - V nA 50 V 1.2 pF pF 0.3 2 ns nH IR VF CT CT rf s Ls Forward current IF = f (TA*TS) per each Diode BAR63-04,-05,-06 mA mA TS IF TA TS IF TA TS TA TS TA Semiconductor Group 2 Edition A01, 23.02.95 BAR 63... Permissible pulse load RthJS = f (tp) BAR63 K/W Permissible pulse load IFmax / IFDC = f (tp) BAR63 IFmax _____ I FDC R thJS tp tp Permissible pulse load RthJS = f (tp) BAR63-04,-05,-06 K/W Permissible pulse load IFmax / IFDC = f (tp) BAR63-04,-05,-06 IF max ______ I DC F R thJS tp t p Semiconductor Group 3 Edition A01, 23.02.95 BAR 63... Forward current IF= f(VF) 103 [mA] 2 10 IF 1 10 85C 25C 0 10 -40C 10-1 10-2 10-3 0.3 0.5 VF 0.8 1 [V] 1.2 Forward resistance rf= f (IF) f = 100 MHz Diode capacitance CT= f (VR) f = 1 MHz. Semiconductor Group 4 Edition A01, 23.02.95 |
Price & Availability of BAR63-04
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |